THE ANISOTROPY OF THE HOT-HOLE DRIFT VELOCITY IN GE.REGGIANI L.1976; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1976; VOL. 37; NO 3; PP. 293-300; BIBL. 22 REF.Article

BLOCH STATES MIXING IN SI CONDUCTION BANDREGGIANI L; CALANDRA C.1973; PHYS. LETTERS, A; NETHERL.; DA. 1973; VOL. 43; NO 4; PP. 339-340; BIBL. 6 REF.Serial Issue

BULK HOT-ELECTRON PROPERTIES OF CUBIC SEMICONDUCTORSJACOBONI C; REGGIANI L.1979; ADV. PHYS.; GBR; DA. 1979; VOL. 28; NO 4; PP. 493-553; BIBL. 4 P.Article

ON THE PIEZORESISTANCE COEFFICIENTS OF HOLES IN GE.MORTEN B; REGGIANI L.1977; LETTERE NUOVO CIMENTO; ITAL.; DA. 1977; VOL. 18; NO 11; PP. 329-332; BIBL. 13 REF.Article

Faciès lacustres et dynamique sédimentaire dans la Molasse d'eau douce inférieure Oligocène (USM) de Savoie = Lacustrine facies and sedimentary dynamics in the Oligocene Lower Freshwater Molasse of Savoie, FranceREGGIANI, L.Eclogae Geologicae Helvetiae. 1989, Vol 82, Num 1, pp 325-350, issn 0012-9402Article

ELECTRON ENERGY RELAXATION TIME IN SI AND GECOSTATO M; FONTANESI S; REGGIANI L et al.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 3; PP. 547-564; BIBL. 92 REF.Serial Issue

RELAXATION TIME OF PHONONS IN NONOHMIC CONDUCTION IN SEMICONDUCTORSCOSTATO M; GAGLIANI G; REGGIANI L et al.1972; ATTI SEMINAR. MAT. FIS. UNIV. MODENA; ITAL.; DA. 1972; VOL. 21; NO 1; PP. 87-112; BIBL. 3 P. 1/2Serial Issue

ACOUSTIC SCATTERING IN A TWO-BAND SYSTEM AND ITS APPLICATIONS TO HOLE TRANSPORT PROPERTIES IN CUBIC SEMICONDUCTORSBOSI S; JACOBONI C; REGGIANI L et al.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 8; PP. 1525-1531; BIBL. 15 REF.Article

Quantum hydrodynamic models from a maximum entropy principleTROVATO, M; REGGIANI, L.Journal of physics. A, Mathematical and theoretical (Print). 2010, Vol 43, Num 10, issn 1751-8113, 102001.1-102001.11Article

The role of boundary conditions in shot noise in elastic diffusive conductorsGOMILA, G; REGGIANI, L.Semiconductor science and technology. 2000, Vol 15, Num 8, pp 829-835, issn 0268-1242Article

Electrical instability of thin films driven by Joule heatingPENNETTA, C; REGGIANI, L.Computational materials science. 2001, Vol 20, Num 3-4, pp 451-455, issn 0927-0256Article

Drift and diffusion of charge carriers in silicon and their empirical relation to the electric fieldALI OMAR, M; REGGIANI, L.Solid-state electronics. 1987, Vol 30, Num 7, pp 693-697, issn 0038-1101Article

Drift velocity and diffusivity of hot carriers in germanium: model calculationsALI OMAR, M; REGGIANI, L.Solid-state electronics. 1987, Vol 30, Num 12, pp 1351-1354, issn 0038-1101Article

ELECTRON EFFECTIVE MASSES AND LATTICE SCATTERING IN NATURAL DIAMONDNAVA F; CANALI C; JACOBONI C et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 4; PP. 475-477; BIBL. 15 REF.Article

ON THE LATTICE SCATTERING AND EFFECTIVE MASS OF HOLES IN NATURAL DIAMONDREGGIANI L; BOSI S; CANALI C et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 30; NO 6; PP. 333-335; BIBL. 13 REF.Article

DIFFUSION COEFFICIENT OF HOLES IN GEREGGIANI L; CANALI C; NAVA F et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 8; PP. 4446-4452; BIBL. 20 REF.Article

Giant suppression of avalanche noise in GaN double-drift impact diodesREKLAITIS, A; REGGIANI, L.Solid-state electronics. 2005, Vol 49, Num 3, pp 405-408, issn 0038-1101, 4 p.Article

Nonlinear fluctuation conductivity of a layered superconductor : crossover in strong electric fieldsVARLAMOV, A. A; REGGIANI, L.Physical review. B, Condensed matter. 1992, Vol 45, Num 2, pp 1060-1063, issn 0163-1829Article

Noise and conductance in one-dimensional systemsKUHN, T; REGGIANI, L.Il Nuovo cimento. D. 1992, Vol 14, Num 5, pp 509-515, issn 0392-6737Article

A macroscopic quantum Langevin equationSHIKTOROV, P; STARIKOV, E; GRUZINSKIS, V et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S232-S234, issn 0268-1242Conference Paper

Special issue featuring papers from the International Conference on Nonequilibrium Carrier Dynamics in SemiconductorsREGGIANI, L; BORDONE, P; BRUNETTI, R et al.Semiconductor science and technology. 2004, Vol 19, Num 4, issn 0268-1242, 494 p.Conference Proceedings

First-principle calculation of the recombination cross-section assisted by acoustic phonons at shallow impurities in semiconductorsREGGIANI, L; VARANI, L; MITIN, V et al.Il Nuovo cimento. D. 1991, Vol 13, Num 5, pp 647-662, issn 0392-6737, 16 p.Article

Monte Carlo algorithms for collisional broadening and intracollisional field effect in semiconductor high-field transportREGGIANI, L; LUGLI, P; JAUHO, A.-P et al.Journal of applied physics. 1988, Vol 64, Num 6, pp 3072-3078, issn 0021-8979Article

Monte Carlo algorithm for generation-recombination noise in semiconductorsREGGIANI, L; LUGLI, P; MITIN, V et al.Applied physics letters. 1987, Vol 51, Num 12, pp 925-927, issn 0003-6951Article

Photoreceptors for a light biotransducer: a comparative study of the electrical responses of two (type-1) opsinsALFINITO, E; POUSSET, J; REGGIANI, L et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 39, issn 0957-4484, 395501.1-395501.10Article